Incoherent Detection of Ultrasonic Using Thin Film Amorphous Semiconductors.

Abstract

Thin film ultrasonic detectors have been fabricated from amorphous germanium. The detectors are insensitive to phase and function as sensitive power detectors for ultrasonic waves. Due to the mode of operation of the detectors, their usefulness is limited to the temperature range 1.5-77 degrees K. The dependence of the sensitivity of the devices upon the structural and electrical characteristics of the a-Ge material has been investigated experimentally. It was found that useful performance is obtained only when electrical conduction is by a variable range hopping mechanism. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1979
Accession Number
ADA083285

Entities

People

  • A. H. Francis

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acoustic Waves
  • Air Force
  • Charge Carriers
  • Chemistry
  • Compound Semiconductors
  • Detectors
  • Elastic Waves
  • Electrical Properties
  • Fermi Levels
  • Films
  • Materials
  • Materials Laboratories
  • Materials Science
  • Semiconductors
  • Thin Films
  • Transducers
  • Ultrasounds

Fields of Study

  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Nuclear and Radiation Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Microelectronics - Microelectromechanical Systems