High Resistivity Molecular Beam Epitaxial AlGaAs for Device Applications.

Abstract

AlGaAs & GaAs molecular beam epitaxial (MBE) layers suitable for device application, are studied and the results are discussed. Analysis includes Van der Pauw and Hall measurements, photoluminescence, sheet resistance, photoinduced current transient spectroscopy (PITS), secondary ion spectroscopy, and capacitance-voltage profiling. All indications are that high quality buffer layers of AlGaAs and active layers of GaAs can be produced by MBE which can yield devices of exceptional performance. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1980
Accession Number
ADA083778

Entities

People

  • D. L. Miller
  • R. D. Fairman
  • W. A. Hill

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Electronics
  • Epitaxial Growth
  • Field Effect Transistors
  • Low Noise
  • Mass Spectrometry
  • Mass Spectroscopy
  • Materials
  • Measurement
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Resistance
  • Semiconductors
  • Spectra
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology