HgCdTe Fabrication Using Directed Energy Techniques
Abstract
The goal of this research program is to develop hot-wall vacuum deposition ad new epitaxy techniques capable of producing HgCdTe semiconductor alloys for future mosaic focal plane applications. The approach is to deposit a large (50 mm o.d.), thin film of CdTe, change its structure to that of a single crystal by either heteroepitaxy or graphoepitaxy, and then modify its composition to HgxCd1-x Te by either vapor exchange or ion implantation and annealing. Pulsed electron beam processing will be tested for both heteroepitaxial and graphoepitaxial growth of a thin crystalline film, and for pulse annealing high-dose implants in CdT e. This new technology should result in larger, more uniform crystals of HgCdTe than are currently available (and unsuitable) for the proposed application. Results to date have demonstrated that CdTe films can be deposited at sufficient rates of growth for production, and that CdTe and HgCdTe can be processed without damaging the surface. Preliminary measurement of the physical and electrical properties of the deposited films is expected in the next reporting period.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1980
- Accession Number
- ADA084131
Entities
People
- Anton C. Greenwald
- Robert G. Wolfson