The Role of Iodine Motion on the Electronic Properties of Tetrathiofulvalene Iodide (TTF-I sub n, n Approximately 0.7).

Abstract

The response of electric current in the quasi-one-dimensional conductor TTF-In (N approximately 0.7) under high electric fields has been investigated. A large portion of this thesis is comprised of presentation and interpretation of some puzzling phenomena observed under high pulsed bias. The phenomena include negative-resistance-like behavior, memory effects, erratic occurrence of oscillations with approximately 70 MHz frequency, and several others. The numerical values assoicated with all the phenomena except the oscillation frequency fluctuate erratically even when the experiments are repeated on the same sample. The crystal structure of TTF-In consists of two incommensurate sublattices, a rigid TTf sublattice and a seemingly flexible iodine sublattice. Based on such structural properties, it is postulated that the iodine ions have appreciable mobility, restrained only due to pinning at impurities and atomic defects. The structure suggests that, under high field, the iodine sublattic transforms from the ordered phase to a disordered phase. It is further postulated that the changes in sample conductance observed under high field are due to a localization of the carriers along the TTF stacks caused by the phase transition of the iodine sublattice. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1980
Accession Number
ADA084136

Entities

People

  • Shabbir Moiz Latif

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplitude
  • Conductivity
  • Crystal Structure
  • Crystals
  • Diseases And Disorders
  • Electric Fields
  • Energy Bands
  • Frequency
  • Generators
  • Hysteresis
  • Impedance
  • Low Temperature
  • Phase Transformations
  • Resistance
  • Transition Temperature
  • Transitions
  • Transport Properties

Readers

  • Aerospace Propulsion Engineering.
  • Materials Science and Engineering.
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene