Radiation Evaluation Study of LSI RAM Technologies.

Abstract

Five commercial LSI static RAM technologies having a 1 kilobit capacity were radiation characterized. Arrays from the TTL, Schottky TTL, NMOS, CMOS, and CMOS/SOS families were evaluated. Radiation failure thresholds for gamma dose-rate logic upset, total gamma dose survivability, and neutron fluence survivability were determined. Included is a brief analysis of the radiation failure mechanism for each of the logic families tested.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA084168

Entities

People

  • Gregory L. Dinger
  • Michael G. Knoll

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuits
  • Dose Rate
  • Failure Mode And Effect Analysis
  • Gamma Rays
  • Ionizing Radiation
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Power Electronics
  • Power Supplies
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Silicon Controlled Rectifiers
  • Survivability
  • Transistor Transistor Logic
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.