Preparation and Photoelectronic Properties of the System Cd sub 2 Ge sub 1-x Si sub x O sub 4.
Abstract
Members of the system Cd sub 2 Ge sub 1-x Si sub Si sub x O sub 4 where 0 less than or equal to x less tha or equal to 0.4 have been prepared. These compounds were observed to crystallize with the olivine structure, space group Pbnm. The resistivity, Hall mobility, flat-band potential, band gaps, and stability were determined as functions of composition. The variation of these photoelectronic properties can be attributed to the reduction of the cell parameters with increasing silicon substitution. The resulting increase in stability is dramatic.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1980
- Accession Number
- ADA084199
Entities
People
- Aaron Wold
- Kirby Dwight
- Robert Kershaw
- Van Son Nguyen
Organizations
- Brown University