GaAs Surface Passivation for Device Applications.

Abstract

This report describes the progress in the second six-month period of a program to develop deposited dielectrics for GaAs device applications. Three applications of the dielectrics are being investigated: (1) isolation of control electrodes; (2) passivation of the GaAs surface; and (3) encapsulation of completed circuits. The dielectrics being studied include silicon oxynitride; mixtures of silicon nitride and germanium nitride; and mixtures of silicon dioxide, gallium oxide, and aluminum oxide. During this report period, GaAs metal-semiconductor gate field effect transistors were evaluated for microwave gain degradation following encapsulation with a plasma-deposited dielectric. Design of an improved deposition system is described. Several phenomena observed in capacitance-voltage data are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA084210

Entities

People

  • C. L. Anderson
  • J. W. Peters
  • M. D. Clark

Organizations

  • HRL Laboratories

Tags

DTIC Thesaurus Topics

  • Air Force
  • Chemical Vapor Deposition
  • Contracts
  • Dielectrics
  • Encapsulation
  • Field Effect Transistors
  • Films
  • Germanium Compounds
  • Government Procurement
  • Materials
  • Measurement
  • Metals
  • Physical Properties
  • Radio Frequency Power
  • Refractive Index
  • Semiconductors
  • Silicon Compounds

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene