Electronic Process in InP and Related Compounds.

Abstract

An experimental system to measure ionization coefficients in InP and related compounds is described. The current-voltage characteristics of Schottky barriers on p-type InP are presented. A set of masks designed to fabricate guarded Schottky diodes for making ionization coefficient measurements is described. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1980
Accession Number
ADA084260

Entities

People

  • C. L. Anderson
  • Dawn E. Holmes
  • G. S. Kamath
  • H. L. Dunlap
  • K. V. Vaidyanathan

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Coefficients
  • Diodes
  • Electronics Laboratories
  • Electrons
  • Epitaxial Growth
  • Fibers
  • Guard Rings
  • Ionization
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Materials
  • Metal-Semiconductor Junctions
  • Military Research
  • Radiation
  • Schottky Barrier Devices
  • Schottky Diodes

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems