A Total Dose Homogeneity Study of the 108A Operational Amplifier.
Abstract
This study investigated the homogeneity of the total dose degradation of 108A-type operational amplifiers. The homogeneity was investigated at the diffusion lot, wafer and subwafer levels, using devices with individual wafer and diffusion lot traceability. The results show that relatively large differences occurred in the variability of the radiation response of devices from different diffusion lots. Much smaller differences occurred for devices from the same wafer or diffusion lot. The response variability of devices at the subwafer level was not much lower than that of the entire wafer unless devices were restricted to small regions of the wafer. It was also demonstrated that breakout transistors or circuits with poorer electrical specifications could be used as test patterns for the low yield 108A op-amps. A small number of devices had abnormally high or low responses which could not be reliably identified by small lot sample testing. Additional system margin must be provided to allow for this behavior.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1979
- Accession Number
- ADA084645
Entities
People
- Allan H. Johnston
- Christy A. Lancaster
Organizations
- Boeing