Influence of Oxidation Parameters on Roughness at the Si-SiO2 Interface.
Abstract
The roughness at the interface Si-SiO2 has been determined on an atomic scale after removal of the oxide by LEED (Low Energy Electron Diffraction). The energy dependent broadening of the diffracted electron beams yields the average size of step free terraces. Silicon (111) samples have been oxidized under various conditions concerning atmosphere (dry and wet oxygen), temperature (800 C and 1000 C), time pretreatment and posttreatment. The oxidation process produces a roughness, which may be decreased by low oxidation rates and appropriate annealing in non-oxidizing atmosphere. The novel technique of evaluation for the first time shows systematically, how oxidation parameters determine the roughness at the interface, which again is important for the performance of MOS-devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1980
- Accession Number
- ADA084781
Entities
People
- M. Henzler
- P. Hahn
Organizations
- Leibniz University Hannover