Investigation of Radiation-Hardened Charge-Coupled Devices.

Abstract

This report describes a study of techniques for improving the performance of CCDs in a nuclear radiation environment. A test chip with both n-surface- and n-buried-channel devices (128-stage four-phase registers) utilizing a double-polysilicon overlapping gate structure was designed, fabricated with low-temperature, pyrogenically-grown channel oxides, and tested. The chip also contains threshold tracking circuits designed to automatically correct for threshold shifts induced by ionizing radiation as well as automatic input and output biasing circuits to provide a radiation-hardened means of injecting and detecting CCD signals. The devices were subjected to high energy (1 MeV) electron radiation and the optimum circuit techniques to improve the radiation tolerance of CCDs were determined. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA084893

Entities

People

  • Leonard R. Rockett Jr

Organizations

  • Sarnoff Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Automatic
  • Cell Physiological Processes
  • Charge Coupled Devices
  • Charge Density
  • Circuits
  • Current Density
  • Digital Images
  • Electron Scattering
  • Errors
  • Fabrication
  • Feedback Amplifiers
  • Hardness
  • Ionizing Radiation
  • Low Temperature
  • Radiation
  • Radiation Effects
  • Standards

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics