Total Dose Hardness Assurance. Volume II. Verification Test Results.
Abstract
This report covers the first phase of a three phase program to develop hardness assurance techniques for the total ionizing radiation dose environment for bipolar and MOS semiconductor devices. Phase I consists of identifying and verifying potentially useful techniques. The report is presented in two volumes. Volume one discusses all of the potential hardness assurance techniques that were identified and whether or not they are sufficiently verified in previous studies. In addition, new techniques are proposed based on models of radiation-induced hole trapping and interface state generation. Volume II is a summary of the test results of the verification tests performed on commercial semiconductor devices. These verification tests were performed either to supplement the limited available data for a potentially useful technique or to generate original data on previously unexamined techniques. The correlation coefficient was determined between the screening parameter and the total dose induced change in device electrical parameters on groups of 5-25 devices of a given type. No high degree of correlation was observed for any of the techniques investigated with the exception of irradiate and anneal on MOS devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1980
- Accession Number
- ADA085013
Entities
People
- Phil A. Young
- Ronald L. Pease
Organizations
- Braddock Dunn & McDonald