Free Surface Properties of III-V Compound Semiconductor Surfaces.

Abstract

Studies of free compound semiconductor surfaces as well as gas-solid and metal-solid interaction are summarized. An experimental and theoretical analysis of the GaAs(110) surface reconstruction was conducted and applied to three additional compounds: InSb, InP and ZnTe. Attempts were made to relate the type and the magnitude of the surface reconstruction of these materials to the covalent-ionic character of the bonding. Knowledge of the atomic reconstructions of these surfaces was used to investigate the reactivity of semiconductor surfaces (GaAs(110)) with gas (oxygen) and metal (aluminum) atoms. These multicomponent systems are at the center of the author's essays to understand the chemistry of these surfaces and its relationship with their atomic reconstruction. Using Low Energy Electron Diffraction (LEED) as the principal tool to investigation, structural information has been obtained which correlates chemical and electronic information obtained by other surface analysis techniques. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1980
Accession Number
ADA085303

Entities

People

  • A. Kahn

Organizations

  • Princeton University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Compound Semiconductors
  • Diffraction
  • Electrical Engineering
  • Electrical Properties
  • Electron Diffraction
  • Electrons
  • Engineering
  • Geometry
  • Materials
  • Materials Science
  • Measurement
  • Metals
  • Scattering
  • Semiconductors
  • Surface Analysis
  • Surfaces

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics