Nitrogen Isoelectronic Traps in Gallium Arsenide Phosphide and Aluminum Gallium Arsenide.

Abstract

The results presented here form the basis for reinterpreting N-trap luminescence in GaAs sub 1-x P sub x and Al sub x Ga sub 1-x As. Previously the luminescence of these centers in ternary alloys was attributed to NN pairs. For the isolated N center, only one bound state was identified, and that corresponded to the A-line in GaP (or AlAs). On the basis of the new data, it is now clear that dominant emission (termed N sub x) is due not to NN pairs but to isolated N and previously ignored phonon coupling. Furthermore, in GaAs sub 1-x P sub 1-x it is found an additional shallow bound state associated largely with the gamma sub 1 band minimum.

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1979
Accession Number
ADA085314

Entities

People

  • Donald James Wolford Jr

Organizations

  • University of Illinois Urbana–Champaign

Tags

DTIC Thesaurus Topics

  • Aluminum
  • Couplings
  • Elements
  • Emission
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Luminescence
  • Metals
  • Nitrogen
  • Post-Transition Metals

Readers

  • Materials Science (Mechanical Engineering).
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics