Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces.
Abstract
The electronic structure and properties of semiconductor interfaces including both vacuum-semiconductor and metal-semiconductor interfaces as well as relevant metal and semiconductor materials have been investigated under this contract. The emphasis is on elucidating the electronic properties of these materials and their interfaces, e.g., metal-semiconductor Schottky barriers, which are of far reaching importance in such semiconductor devices as MOSFETS, CCD devices, photovoltaic devices, etc. Extensive studies of the electronic structure of semiconductor surfaces and interfaces and related metal surfaces as a function of surface preparation, doping, thickness of adsorbed overlayer, etc. has been performed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 24, 1980
- Accession Number
- ADA085673
Entities
People
- Dean E. Eastman
Organizations
- IBM Thomas J. Watson Research Center