Electrical Properties and Photoluminescence of Germanium-Implanted Gallium Arsenide.

Abstract

The data presented show that Ge-implanted GaAs has a complex amphoteric behavior which is controlled by the implantation dose, implantation temperature and anneal temperature. Annealing was performed with r.f. plasma deposited Si3N4 as the encapsulant. Implantations at -100 C resulted in p-layers while those performed at 100 C and above resulted in n-layers regardless of the dose and anneal temperature. Room temperature implants resulted in p- or n-layers depending on the combination of dose and anneal temperature. Electrical activation and carrier mobilities in the implanted layers were low. Low temperature (6 K) photoluminescence indicated that a significant amount of residual damage remained after annealing. Carrier concentration profiles in implanted layers and junction characteristics of Ge-implanted GaAs planar diodes are also presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1979
Accession Number
ADA085891

Entities

People

  • Siu-sing Chan

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Amphoterism
  • Annealing
  • Carrier Mobility
  • Ceramic Materials
  • Data Analysis
  • Electrical Properties
  • Elements
  • Gallium Arsenides
  • Hall Effect
  • Heat Treatment
  • Implantation
  • Low Temperature
  • Magnetic Fields
  • Materials
  • Measurement
  • Mobility

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics