Aluminum Nitride Crystal Growth
Abstract
This report summarizes the progress made during the year in growing single crystals of AlN from precursors prepared by the reaction of high purity aluminum droplets with ammonia. Crystal growth was achieved by vapor phase transport and sublimation. A new scheme for preparation of AlN from metal- organics is proposed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1979
- Accession Number
- ADA085932
Entities
People
- G. A. Slack
Organizations
- General Electric