Aluminum Nitride Crystal Growth

Abstract

This report summarizes the progress made during the year in growing single crystals of AlN from precursors prepared by the reaction of high purity aluminum droplets with ammonia. Crystal growth was achieved by vapor phase transport and sublimation. A new scheme for preparation of AlN from metal- organics is proposed.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1979
Accession Number
ADA085932

Entities

People

  • G. A. Slack

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum Nitrides
  • Boiling Point
  • Ceramic Materials
  • Chemical Synthesis
  • Chemistry
  • Containers
  • Crystal Growth
  • Crystals
  • Dissociation
  • High Temperature
  • Materials Science
  • Molecules
  • Nitrogen Compounds
  • Silica Glass
  • Surface Acoustic Waves
  • Thermal Conductivity
  • Vapor Phases

Fields of Study

  • Physics

Readers

  • Combustion science or combustion engineering.
  • Materials Science and Engineering.