Investigation of InP Technology.
Abstract
The reaction rate for the synthesis of high-purity InP has been increased to 2.5 cm/day by increasing the reservoir temperatures to 460 C and 1040 C for P and In respectively. Characterization of the material by van der Pauw and photoluminescence measurements indicates the same background carrier concentration as that prepared at lower temperatures and therefore lower rates. Zero dislocation density n(+) S-doped and p(+) Zn-doped InP single crystals can be prepared routinely by LEC. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1980
- Accession Number
- ADA086012
Entities
People
- George A. Antypas