Magnetoresistance Mobility Profiling of MESFET Channels.

Abstract

Magnetoresistance provides a straightforward, non-destructive technique for determining the carrier mobility in the conducting channel of field effect transistors (FETs) over their full range of operation. The analysis is well suited to the typical FET geometry. The technique is illustrated here by a comparative study of GaAs depletion mode FET devices. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1980
Accession Number
ADA086078

Entities

People

  • H. H. Wieder
  • J. R. Sites

Organizations

  • Colorado State University

Tags

DTIC Thesaurus Topics

  • Capacitance
  • Carrier Mobility
  • Compound Semiconductors
  • Current Density
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Frequency
  • Magnetic Fields
  • Magnetoresistance
  • Resistance
  • Scattering
  • Semiconductors
  • Test And Evaluation
  • Thickness
  • Transistors
  • United States

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design