Feasibility of Open Tube Slider Growth of HgCdTe from Te-Rich Solution.

Abstract

This report covers the feasibility demonstration of the growth of Hg1-x-CdxTe by liquid phase epitaxy from Te-rich solution at atmospheric pressure. Growth parameters are calculated from the phase diagram, measurement methods are described for determining layer thickness, uniformity, composition, and electrical properties. Substrate preparation and the growth process are described. Comparisons are made with growth from Hg-rich and HgTe-rich solutions. Layers as thin as 2 micrometers and as thick as 54 micrometers have been grown; most layers are 1 cm sq but some are 2x3 cm sq. We conclude that LPE growth is feasible from Te-rich solution at atmospheric pressure and are continuing our efforts to optimize the growth parameters and to increase the layer area. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1980
Accession Number
ADA086342

Entities

People

  • John E. Bowers
  • Joseph L. Schmit

Organizations

  • Honeywell International, Inc.

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Coefficients
  • Contracts
  • Crystals
  • Diagrams
  • Diffusion Coefficient
  • Electrical Properties
  • Fluids
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Liquids
  • Materials
  • Materials Laboratories
  • Measurement
  • Phase Diagrams
  • Vapor Pressure
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology