Second Breakdown Susceptibility of Silicon-On-Sapphire Diodes having Systematically Different Geometries.
Abstract
Experiments were performed on thin films silicon-on-sapphire (SOS) diodes (p(+) - n - n(+)) to determine the roles of geometry and doping level (ten to the 15th power to ten to the 17th power atoms/cubic centimeters) on current configurations, second breakdown susceptibility, and damage morphology. Geometric parameters varied including diode width, n-region length, n-region doping density, diffusion spikes of different sizes and configurations on the n(+)n or p(+)n interfaces, contact spikes at the n(+)-metal and p(+)-metal interfaces, and a variety of other current concentration geometries. Prior to the present study, the effectiveness of junction defects in reducing resistance to second breakdown was not known. However, it was suspected that such defects might result in 'maverick' devices, that is, devices which fail much below their rated electrical parameters. SOS diodes, specially fabricated by Rockwell International, were tested using Sunshine's stroboscopic technique. This method exploits the decrease of the optical transmittancy of silicon with increasing temperature.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 30, 1980
- Accession Number
- ADA086345
Entities
People
- Aradhana Baruah
- Edward R. Knight
- Fu-tai Liou
- Paul P. Budenstein
Organizations
- Auburn University