Characterization and Analysis of Indium-Doped Silicon Extrinsic Detector Material

Abstract

This third report of a two-year program describes progress made in analyzing Si:In detector material. Hall-effect, photoluminescence, and IR measurements were performed to characterize the X level and to determine its nature.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1979
Accession Number
ADA086421

Entities

People

  • James Baukus
  • T. Mcgill

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Charged Particles
  • Contracts
  • Crystal Growth
  • Crystal Lattice Vibrations
  • Detection
  • Detectors
  • Energy Levels
  • Equations
  • Ground State
  • Hall Effect
  • Heat Treatment
  • High Temperature
  • Infrared Detectors
  • Ion Implantation
  • Materials

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.