Submicron FETs Using Molecular Beam Epitaxy.

Abstract

Electron-beam exposure and MBE material have been used to achieve quarter-micron gate length GaAs FETs. A noise figure of 1.5 dB with an associated gain of 15 dB has been measured at 8 GHz. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1979
Accession Number
ADA086422

Entities

People

  • C. Nishimoto
  • Darci Collins
  • S. Bandy

Tags

Communities of Interest

  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Adhesion
  • Amplifiers
  • Anodizing
  • Citric Acid
  • Computers
  • Contracts
  • Electron Beams
  • Equations
  • Field Effect Transistors
  • Geometry
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Military Research
  • Molecular Beams
  • Stratified Fluids
  • Thickness

Readers

  • Electronics Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Microelectronics