Growth and Application of Cadmium Telluride.
Abstract
Large Single Crystals of CdTe were grown by the methods of Liquid Encapsulated Czochralski, Fast Vertical Bridgman, Travelling Heater Method, Stockbarger method. Electrical characterization was done by Seebeck, Hall Effect and Conductivity measurements. Surfaces were investigated using XPS, UPS, AES and LEED. Metal-CdTe contacts were fabricated. Formation of these was monitored using XPS, UPS, LEED, AES. Barrier Heights were established by I-V, C-V and UPS measurements. Results show that the effect of the CdTe surface on the type of contact formed is very marked. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1980
- Accession Number
- ADA086991
Entities
People
- M. H. Patterson
- R. H. Williams