GaAs Surface Effects.
Abstract
This report presents the results of the first six months of a program to investigate the passivation of GaAs surfaces using a native insulator. Ion implantation of phosphorus and subsequent oxidation of the surface was used to form the insulator. Post-implant annealing indicates that CVD SiO2 has somewhat better encapsulating properties than sputtered Si3N4. It was found that high-dose phosphorus implantation significantly reduces decomposition of the semiconductor surface under the SiO2 encapsulant during high-temperature annealing. Ion microprobe analysis of the implant profiles indicate that phosphorus diffusion is not significant during either high-temperature annealing or oxidation. Elemental depth profiles of oxide layers indicate phosphorus incorporation into the film in the region from the peak of the implant to the interface with the semiconductor. A lack of arsenic and phosphorus at the oxide surfaces indicates that this region may be composed primarily of Ga2O3.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1980
- Accession Number
- ADA087033
Entities
People
- G. Kinoshita
- Gordon G. Kuhlmann