Advanced Silicon Material Development for LADIR.

Abstract

This interim report gives dopant distribution results from several float-zoned <100> silicon crystals. Uniformity of Ga improves as the growth rate is decreased and the rotation rate during growth is increased. This results agree qualitatively with diffusion theory and show promise of substantial uniformity improvement over state of the art Si:Ga material for IR detector applications. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1980
Accession Number
ADA087286

Entities

People

  • H. Kimura
  • O. J. Marsh

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Boundaries
  • Boundary Layer
  • Convection
  • Crystal Growth
  • Crystals
  • Detectors
  • Diffusion
  • Diffusion Coefficient
  • Heat Energy
  • High Temperature
  • Materials
  • Materials Laboratories
  • Neutron Bombardment
  • Neutron Flux
  • Standards
  • Steady State

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.