Charge Storage, Retention and Endurance in MNOS Devices.

Abstract

The steady state current through the double dielectric of MNOS capacitors on p-silicon substrate was measured as function of temperature for several fixed fields in the silicon oxide of a polarity promoting hole flow from the silicon. It is shown that the availability of empty recipient trap states for holes tunneling from the silicon into the nitride controls the current. The occupancy of these trap states is governed by Frenkel-Poole detrapping at elevated temperatures and by Fowler-Nordheim tunnel emission from the traps at low temperature. Transient charging measurements support this interpretation. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 13, 1980
Accession Number
ADA087432

Entities

People

  • Kurt Lehovec

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Computers
  • Current Density
  • Electrical Engineering
  • Emission
  • Energy Bands
  • Experimental Data
  • Language
  • Low Temperature
  • Machine Languages
  • Materials Science
  • Memory Devices
  • Polarity
  • Scientists
  • Space Charge
  • Steady State
  • Time Intervals

Readers

  • Integrated Circuit Design and Technology.
  • Mathematical Modeling and Probability Theory.
  • Semiconductor Device Technology