Fabrication of Josephson Tunnel Junctions by Reactive Ion Milling.
Abstract
A new technique has been developed for growing high quality, ultrathin oxide layers on metal films, suitable for use as tunneling barriers in Josephson junction devices. The oxides are produced with an argon-oxygen ion beam, and the rate of growth is determined by the competition between oxidation and sputtering by the ions. The oxidation technique has been applied to the fabrication of high current density submicron niobium-lead alloy Josephson junctions. High quality junctions have been produced with critical current densities exceeding 100,000 amp/sq cm and having low leakage currents at voltages below the energy gap. An edge geometry has been developed, allowing in-line junctions to be formed on the ion mill-patterned edge of Nb film. In this way, junction width is controlled by the Nb film thickness. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 21, 1980
- Accession Number
- ADA087448
Entities
People
- Alan W. Kleinsasser
- Robert A. Buhrman
Organizations
- Cornell University School of Applied and Engineering Physics