High Quality Submicron Niobium Tunnel Junctions with Reactive Ion Beam Oxidation.
Abstract
A new reactive ion beam oxidation technique has been applied to the fabrication of rugged, high quality niobium-lead alloy Josephson tunnel junctions. Control of critical current density over a wide range is possible, and critical current densities exceeding 1 million amp/sq cm have been obtained. In addition, a process-compatible edge geometry has been developed which allows a junction to be formed on the faceted edge of a niobium base electrode, yielding devices with areas of 10 to the minus 9th power sq cm using 1 micrometer photolithography. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 22, 1980
- Accession Number
- ADA087449
Entities
People
- Alan W. Kleinsasser
- Robert A. Buhrman
Organizations
- Cornell University School of Applied and Engineering Physics