A Monolithic GaAs I.F. Amplifier for Integrated Receiver Applications,

Abstract

A monolithic GaAs integrated amplifier was constructed for the 500 to 1000 MHz intermediate frequency band. The amplifier provides 8.0 + or - 1.5 dB gain across the band. The output of the amplifier utilizes a source follower configuration to obtain a favorably low output VSWR of less than 1.5:1 (return loss >15 dB). All bias lines with integral bypass capacitors are contained on the chip and this amplifier is suitable for further integration as a building block of a monolithically integrated receiver front end.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1980
Accession Number
ADA088298

Entities

People

  • Abhinav Gupta
  • D. R. Ch'en
  • D. R. Decker
  • W. Petersen

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Amplifiers
  • Capacitors
  • Ceramic Materials
  • Circuits
  • Fabrication
  • Field Effect Transistors
  • Film Resistors
  • Frequency
  • Frequency Bands
  • Gain
  • Heat Treatment
  • Integrated Circuits
  • Ion Implantation
  • Losses
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Test Fixtures

Readers

  • Electronics Engineering
  • Microwave Engineering.