Research on Low Temperature, Directed Energy Processing of Very Large Scale Integrated Structures.

Abstract

This is the third semiannual report of a program to demonstrate that low temperature processing techniques, particularly pulsed electron beam surface heating, can eliminate the need for high temperature thermal cycling of silicon wafers in fabricating very large scale integrated (VLSI) devices. This report describes results using pulsed annealing techniques to fabricate: (1) low leakage diodes, (2) ion-implanted resistors defined by thin (2.5 micron) oxide windows, and (3) small geometry patterns to measure lateral diffusion of dopants. Comparison to high temperature thermal processing was favorable. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1980
Accession Number
ADA088562

Entities

People

  • Anton Greenwald

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Electron Beams
  • Fabrication
  • Field Effect Transistors
  • Guard Rings
  • Heating
  • High Temperature
  • Ion Implantation
  • Low Temperature
  • Materials
  • Oxide Films
  • Point Defects
  • Resistance
  • Solid Phases

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene