Development of Charge Transfer Devices for 1-2 Micron Imaging.
Abstract
There are a number of military applications for a passive (available illumination) night vision capability. Technological advances in image intensifiers and high performance photocathodes have resulted in night vision systems which operate in the visible and near infrared spectrum under low level moonlight and starlight illumination. These systems are, however, completely ineffective under moonless or overcast conditions because of the low level of light in the 0.5-0.9 micron region under such conditions. Since there is considerable night glow ambient illumination in the 1.0-1.8 micron wavelength region which is nearly independent of cloud cover, one solution to this problem is the development of an imaging system which operates in this wavelength region. The development of a 1.0-1.8 micron imaging system has been the goal of a number of research efforts over the past 10 years. Most of these efforts have been directed at the development of a photocathode which would work in the 1.0-1.8 micron region. In spite of the large number of device concepts examined, none has yet emerged as a viable candidate to meet the requirements for a 1.8 micron imaging photocathode. A potential alternative to a photocathode for infrared imaging is the charge coupled device (CCD). While Si CCD's have recently come to the forefront for both visible and 3-5 micron imaging applications, there are no suitable deep level impurities in this material for operation in the 1-2 micron region. Furthermore, Si devices designed for 3-5 micron require cooling to approximately 40K for satisfactory opertion.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1978
- Accession Number
- ADA088743
Entities
People
- Ira Deyhimy