Ion Implantation of Wide Bandgap Semiconductors.

Abstract

The primary objectives of this program are to study the electrical properties and carrier distributions in ion-implanted and annealed GaAs and to demonstrate the feasibility of forming planar, isolated p-n junctions by sequential implantation of donors and acceptors into semi-insulating GaAs. To fabricate such planar junctions, a selective area implantation process technology was developed. The required device isolation was achieved by exploiting the semi-insulating nature of Cr-doped GaAs.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1980
Accession Number
ADA089026

Entities

People

  • C. L. Anderson
  • H. L. Dunlap
  • K. V. Vaidyanathan
  • R. A. Jullens

Organizations

  • HRL Laboratories

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Carrier Mobility
  • Electrical Engineering
  • Electrical Properties
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Films
  • Ion Implantation
  • Mass Spectrometry
  • Metal-Semiconductor Junctions
  • Metals
  • Military Research
  • P-N Junctions
  • Power Electronics
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics