Photoelectronic Properties of Ternary Niobium Oxides.

Abstract

A series of ternary niobium oxides were prepared and their photoelectronic properties evaluated. When two species of photoactive centers are simultaneously present, the higher flat-band potential appears to dominate. But it is evident that both species contribute their characteristic sets of inter-band transitions to the ensemble. In this respect, these oxide semiconductors behave differently than the conventional, broad-band semiconductors. It would appear that different photoactive centers remain at least partially independent. Hence, for FeNbO4, the data show all the characteristics of the (NbO6) octahedra in addition to all the characteristics of the (FeO6) centers.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1980
Accession Number
ADA089238

Entities

People

  • Aaron Wold
  • Kirby Dwight

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Gaps
  • Band Structures
  • Chemical Engineering
  • Chemistry
  • Energy
  • Energy Bands
  • Gap Analysis
  • Materials
  • Materials Science
  • Military Research
  • New York
  • Optical Absorption
  • Quantum Efficiency
  • Rhode Island
  • Semiconductors
  • United States

Readers

  • Chemistry (specifically Chemical Fluorescence)
  • Materials Science and Engineering.
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene