Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Abstract

This work includes a study of the morphology associated with the oxidation of polycrystalline silicon, a description of moderate field charge injectors using silicon rich SiO2, a technique for studying trapping characteristics using these charge injectors and a review paper on radiation damage in SiO2.or)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1980
Accession Number
ADA089704

Entities

People

  • D. J. Dimaria
  • D. W. Dong
  • E. A. Irene
  • E. Tierney
  • R. Ghez

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Creep
  • Crystal Structure
  • Crystals
  • Electric Fields
  • Electromagnetic Fields
  • Electronics Industry
  • Energy Bands
  • Heat Treatment
  • Ionizing Radiation
  • Materials Laboratories
  • Materials Processing
  • Materials Science
  • Metal Oxide Semiconductors
  • Refractive Index
  • Semiconductor Devices
  • Semiconductors
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Combustion and Flow Dynamics.
  • Theoretical Analysis.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene