CCD Corner-Turning Memory.

Abstract

Two analog CCD reformatting memories were designed and fabricated using an n-channel, double-level, self-alighed polysilicon gate process. These unique CCD structures employ two-dimensional charge transfer cells in a square memory array (32 x 32 and 64 x 64 elements) which is accessed by means of integrated CCD demultiplexer and multiplexer structures, resulting in greater dynamic range than observed in previous line-addressed designs. Details related to the design of this complex device and the results of experimental tests are presented. A secondary objective involved the development of a process-compatible bipolar output device for high speed applications. An analysis of this bipolar output circuit is presented, and experimental results are discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1980
Accession Number
ADA089729

Entities

People

  • Robert J. Kansy

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acoustic Waves
  • Bipolar Junction Transistors
  • Charge Coupled Devices
  • Converters
  • Data Rate
  • Diagrams
  • Doppler Radar
  • Dual Channel
  • Equivalent Circuits
  • Generators
  • Radar
  • Schematic Diagrams
  • Signal Processing
  • Surface Acoustic Wave Devices
  • Surface Acoustic Waves
  • Transistors
  • Two Dimensional

Readers

  • Integrated Circuit Design and Technology.
  • Parallel and Distributed Computing.