Reliability Prediction Modeling of New Devices.
Abstract
This report presents reliability prediction models for high density microcircuits including magnetic bubble and charge-coupled device memories for inclusion in MIL-HDBK-217C, 'Reliability Prediction of Electronic Equipment'. The approach in this investigation was unique in that the models were developed utilizing only early device life cycle data, since there was only limited field data available. Two separate models were developed. An additive hybrid type failure rate prediction model was formulated for Magnetic Bubble Memories and for the Charge-Coupled Memory devices it was found that the NMOS Dynamic RAM model currently in MIL-HDBK-217C, Notice 1 was applicable. Both models are presented in the standard MIL-HDBK-217C format, are relatively simple to use, and allow for refinements based on field and life test data as it becomes available. Finally the models exhibit reasonable correlation with existing field data. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1980
- Accession Number
- ADA090029
Entities
People
- Martin Cohen
- Roger G. Long
Organizations
- Arthur D. Little