Study of the Electronic Surface States of III-V Compounds
Abstract
At the time of the last semiannual report, we had stated the development of the unified defect model for Schottky-barrier formation. Since then, work has proceeded to further explain the nature and the source of states at the oxide:III-V interface and metal semiconductor interface. This is of crucial importance to the MOS technology. Along with the extension in scope of the unified defect model, more work to establish the model on a more refined and definitive basis has been carried out. Making use of the techniques we have developed, we started studying on an atomic scale the bonding trends of column III and V elements on GaAs. This work is not only important to the understanding of the metal-semiconductor interface but also has very significant bearing on the crystal growth mechanism. For oxygen adsorption, we have studied in detail both the nature of Fermi-level pinning at very low oxygen coverage and surface chemistry near monolayer coverage. Work on metal-Si interaction has also been greatly advanced in the past six months. Analysis of prior results of Au on Si has been completed. Experiments of Pd on Si have been conducted and results have been analyzed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1980
- Accession Number
- ADA090193
Entities
People
- I. Lindau
- William E. Spicer
Organizations
- Stanford University