Epitaxial Growth of CdSnP2 on InP for Microwave FETs

Abstract

CdSnP2 platelets were grown from Sn solutions to provide samples for characterizing ohmic and Schottky barrier contacts. High temperature Hall and resistivity measurements indicate that the observed n-type conductivity is due to a deficiency of the volatile constituents; probably phosphorus. Both liquid phase and molecular beam epitaxy were examined for the epitaxial growth of CdSnP2 on InP substrates. Best results were obtained with an open tube liquid phase system using a step-cooling technique. X-ray diffraction measurements indicate a lattice mismatch of about - 0.5% for these layers. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 06, 1980
Accession Number
ADA090285

Entities

People

  • C. M. Wolfe
  • G. A. Davis
  • Sheng‐Jen Hsieh

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics
  • Counter IED

DTIC Thesaurus Topics

  • Band Structures
  • Crystals
  • Diffraction
  • Epitaxial Growth
  • High Temperature
  • Liquid Phases
  • Low Temperature
  • Materials
  • Measurement
  • Methanols
  • Phosphorus Compounds
  • Single Crystals
  • Transition Temperature
  • Vacuum
  • Vapor Pressure
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology