Semi-Insulating Gallium Arsenide for Millimeter Wave and High Speed IC Device Applications,

Abstract

A wide variety of semiconductor devices utilizing gallium, Arsenide (GaAs) is currently under development by the military for use in advanced communication, surveillance, and target acquisition systems. The low-field electron mobility of GaAs is one of its greatest attributes and offers high frequency operation in devices such as the field effect transistor (FET). Coupled with the material's high peak velocity and low threshold field, GaAs integrated circuit (IC) devices offer a two to six time speed improvement over their silicon counterparts. When compared with standard silicon IC technology, the process steps for GaAs ICs are relatively simple and few in number. As a result of these advantages, the technology of manufacturing high performance GaAs devices is maturing at a rapid rate.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1980
Accession Number
ADA090437

Entities

People

  • John J. Winter
  • Raymond L. Ross
  • Robert O. Savage
  • Roger J. Malik
  • Thomas R. Aucoin

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Equations
  • Fabrication
  • Fermi Levels
  • Field Effect Transistors
  • Integrated Circuits
  • Magnetic Fields
  • Manufacturing
  • Materials
  • Measurement
  • Semiconductor Devices
  • Semiconductors
  • Temperature Gradients

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • 5G
  • 5G - Internet of Things
  • Microelectronics