Passivation of GaAs Surfaces.
Abstract
Various approaches to passivating the surface of GaAs have been explored. All of these were aimed at tying dangling bonds with atoms bonding more tightly than either Ga or As. Atomic species of hydrogen and nitrogen were generated by a glow discharge in H2, NH3, or N2. Nitridization with ammonia appears most promising. The degree of passivation was monitored by photoluminescence. A fourfold improvement in luminescence efficiency was obtained with nitridization while a factor-of-ten improvement can be obtained with the less practical technique of generating an (AlGa)As skin. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1980
- Accession Number
- ADA090512
Entities
People
- J. I. Pankove
Organizations
- Sarnoff Corporation