Adsorption of Oxygen on the (110) Plane of Tungsten at Low Temperatures.

Abstract

Isotope labelling experiments have established that the adsorption of O2 on the W(110) plane at 20 K leads first to the formation of a dissociated atomic layer. A weakly bound molecular species, alpha-O2, forms only when the atomic layer is essentially complete (O/W = 0.6). The desorption of alpha-O2 was found to be first order with an activation energy of E = 1.9 Kcal/mole and a frequency factor gamma = 3 x 10 to the 9th power. The activation energy is shown to be less than the enthalpy of desorption and the meaning of this result is discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 06, 1980
Accession Number
ADA090604

Entities

People

  • H. Michel
  • R. Gomer
  • R. Opila

Organizations

  • University of Chicago

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Adsorption
  • Atoms
  • Crystal Structure
  • Crystals
  • Desorption
  • Energy
  • Ground State
  • Heat Of Activation
  • Illinois
  • Low Temperature
  • Mass Spectrometers
  • Measurement
  • Power Supplies
  • Spectrometers
  • Tungsten
  • Universities
  • Work Functions

Readers

  • Calculus or Mathematical Analysis
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Marine Hydrodynamics