The Electron Beam Semiconductor (EBS) Amplifier.

Abstract

The Electron Beam Semiconductor (EBS) concept has existed for three decades; but only within the last decade has an active, well-defined program been underway to develop devices that can operate as high-power radio frequency(RF) amplifiers, fast risetime switches, and current and voltage pulse amplifiers. This report discusses the test procedures, data and results of reliability testing of RF and video pulse EBS amplifiers at Electronics Research and Development Command (ERADCOM), Fort Monmouth, New Jersey. Also, the experimental analysis of the series-connected diode EBS device is described in detail. Finally, the report concludes with a discussion of the state-of-the-art of EBS and future trends of the technology. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1980
Accession Number
ADA091283

Entities

People

  • James F. Baxendale
  • Robert M. True

Organizations

  • United States Army Communications-Electronics Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Failure Mode And Effect Analysis
  • Frequency Bands
  • Life Tests
  • Modulation
  • P-N Junction Diodes
  • P-N Junctions
  • Power Supplies
  • Pulse Amplifiers
  • Radio Frequency
  • Radio Frequency Amplifiers
  • Reliability
  • Semiconductor Devices
  • Semiconductor Diodes
  • Semiconductors
  • Test And Evaluation

Fields of Study

  • Physics

Readers

  • Aerospace Test and Evaluation
  • Electrical Engineering
  • Electronics Engineering

Technology Areas

  • Directed Energy
  • Microelectronics