Process Variable Dependence and Interrelationship between Avalanche Injected and Radiation Induced Carrier Trapping in Thermal Oxides.
Abstract
Characterization of the process dependence of avalance injected electrons and holes in thermally grown silicon dioxide has been carried out. Process parameters investigated include oxidation temperature (900, 1000 and 1100 deg C), oxidation ambient (O2, H2O, and O2/HCl), post-oxidation in situ anneal ambient (N2, Ar), cooling ambient (O2, N2, Ar, and H2O), cooling rates (less than 3 sec, 2 min, and 10 min), and post-metallization anneal ambients (N2, N2/H2). Results indicate basic differences between the process dependence of electron traps and that of hole traps while excellent agreement is obtained between avalanche injected and radiation induced hole trapping. Characteristics of the process dependence of hole traps are: a minimum for dry O2 oxides, an increase for N2 post oxidation anneals a 1000 deg C and above, and a high density for HCl/O2 and steam grown oxides. Electron trap densities are minimum at 1100 deg C and highest for steam grown oxides although post oxidation anneals at 1000 deg C are effective in their reduction. Post-metallization anneal ambients were found to have little or no effect on the measured trapping of both holes and electrons. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1980
- Accession Number
- ADA091299
Entities
People
- B. E. Deal
- R. R. Razouk