GaAs Surface Passivation for Device Applications.
Abstract
Three samples of MBE grown graded Al(1-x)Ga(x)As epitaxial layers on GaAs have been prepared. The initial oxidation procedure used on these samples produced only a superficial oxide layer as determined by SAM analysis. C-V and G-V results have been obtained for the initial oxidized specimens and for a specimen of sample 411 which was given a subsequent additional oxidation treatment. During the next reporting period a systematic C-V study as a function of oxidation conditions will be carried out. An initial attempt to deposite an aluminum oxide layer by evaporating Al in an oxidizing atmosphere was unsuccessful which suggests that a much more oxidizing ambient (perhaps a plasma discharge) needs to be utilized if this approach is to be pursued. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1980
- Accession Number
- ADA091304
Entities
People
- D. L. Miller
- J. R. Oliver
- J. R. Waldrop
- R. W. Grant
- S. P. Kowalczyk