Growth of HgCdTe by Modified Molecular Beam Epitaxy

Abstract

HgCdTe thin films were deposited and annealed by laser radiation. The evaporants were analyzed by mass spectroscopy and their chemical compositions were found to depend on the laser scanning rate. The interaction of a short (10 to the minus 7 sec) laser pulse with a crystalline HgCdTe surface was studied. Threshold values for inducing evaporation were determined to be 6 x 10 to the 7th power w/cm square centermeters and 2 x 10 to the 7th power w/cm square centermeters, respectively.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1980
Accession Number
ADA091822

Entities

People

  • J. T. Cheung

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Films
  • Heat Energy
  • Laser Beams
  • Laser Pulses
  • Lasers
  • Latent Heat
  • Mass Spectra
  • Mass Spectroscopy
  • Materials
  • Phase Transformations
  • Radiation
  • Surface Temperature
  • Transition Temperature
  • Transitions

Fields of Study

  • Materials science

Readers

  • Fire Suppression Systems Design.
  • Mathematics or Statistics
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition