Interdiffusion of Metals and Semiconductors.

Abstract

Grain boundary diffusion and surface diffusion were studied, concentrating on Ge films on thin polycrystalline Al films. Measurements of the microstructure of the films and their geometrical parameters were made by transmission electron microscopy (TEM) and diffusion was measured by Auger electron spectroscopy (AES). Values for the diffusion coefficients and activation energy were obtained. Qualitative results are presented for sample preparation methods, the effect of oxidation of the Al film on Ge diffusion on and through the film and diffusion in GaAs/Al systems. Applications of the results are also discussed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1980
Accession Number
ADA091961

Entities

People

  • Y. Shapira

Organizations

  • Tel Aviv University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Coefficients
  • Diffusion
  • Diffusion Coefficient
  • Electron Microscopy
  • Electron Spectroscopy
  • Electrons
  • Grain Boundaries
  • Heat Of Activation
  • Microscopy
  • Semiconductors
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene