Computer-Aided Engineering of Semiconductor Integrated Circuits
Abstract
Economical procurement of small quantities of high performance custom integrated circuits for military systems is impeded by inadequate process, device and circuit models that handicap low cost computer aided design. The principal objective of this program is to formulate physical models of fabrication processes, devices and circuits to allow total computer-aided design of custom large-scale integrated circuits. The basic areas under investigation are (1) thermal oxidation, (2) ion implantation and diffusion, (3) chemical vapor deposition of silicon and refractory metal silicides, (4) device simulation and analytic measurements. This report discusses the fourth year of the program.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1980
- Accession Number
- ADA091969
Entities
People
- B. E. Deal
- C. P. Ho
- C. R. Helms
- J. D. Meindl
- J. D. Plummer
- James F. Gibbons
- Krishna C. Saraswat
- R. W. Dutton
- T. I. Kamins
- W. A. Tiller
Organizations
- Stanford University