HgCdTe Fabrication Using Directed Energy Techniques
Abstract
The goal of this research program is to develop hot-wall vacuum deposition and new epitaxy techniques capable of producing HgCdTe semiconductor alloys for future mosaic focal plane applications. The approach is to deposit a large (50 mm o.d.), thin film of CdTe, change its structure to that of a single crystal by either heteroepitaxy or graphoepitaxy, and then modify its composition to Hg sub x Cd sub (1-x) Te by either vapor exchange or ion implantation and annealing. Pulsed electron beam processing will be tested for both heteroepitaxial and graphoepitaxial growth of a thin crystalline film, and for pulse annealing high-dose implants in CdTe. This new technology should result in larger, more uniform crystals of HgCdTe than are currently available (and unsuitable) for the proposed application. Results to date have demonstrated that single-crystal CdTe films up to 17 micrometers thick can be deposited on mica, and that CdTe and HgCdTe can be pulse processed without damaging the surface. Initial nonstoichiometric evaporations have been corrected.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1980
- Accession Number
- ADA091983
Entities
People
- Anton C. Greenwald
- Robert G. Wolfson