Burn-In of Uncased Semiconductors. A Feasibility Study.

Abstract

The feasibility of burning-in uncased semiconductors has been demonstrated. Twelve quad 2-input NAND gates (type 5400) have been burned-in for 168 hours at +125 C in accordance with MIL-STD-883, Method 1005-1, Test Condition A. Eleven of the devices were retrieved in a physical condition suitable for subsequent use in conventional assembly operations, the twelfth having a corner broken off. The design of the carrier assembly and the special tooling required for assembly are described. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1979
Accession Number
ADA092076

Entities

People

  • James E. Hearl
  • Samuel C. Lukens

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DTIC Thesaurus Topics

  • Beam Leads
  • Electronics Industry
  • Electronics Laboratories
  • Failure Mode And Effect Analysis
  • Feasibility Studies
  • Materials
  • Measurement
  • Microscopes
  • Nand Gates
  • O Rings
  • Platforms
  • Reliability
  • Rings
  • Semiconductor Devices
  • Semiconductors
  • Test Equipment
  • Tools

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  • Computer Engineering
  • Software Engineering

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  • Microelectronics